Renesas R8C/15 Informações Técnicas descarregar pdf (Página 24)

Rev.2.00 Jan 30, 2006 Page 22 of 37

REJ03B0102-0200

R8C/14 Group, R8C/15 Group 5. Electrical Characteristics

NOTES:

1. V

CC = AVcc = 2.7 to 5.5V at Topr = −20 to 85 °C / −40 to 85 °C, unless otherwise specified.

2. Definition of program and erase

The program and erase endurance shows an erase endurance for every block.

If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.

For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that

block, program and erase endurance is counted as one time.

However, do not perform multiple programs to the same address for one time ease.(disable overwriting).

3. Endurace to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).

4. Standard of Block A and Block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000

times aer the same as that in program area.

5. In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram

endurance not to leave blank area as possible such as programming write addresses in turn . If programming a set of 16

bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,

averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for

every block as information and determine the restricted endurance are recommended.

6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at

least three times until the erase error does not occur.

7. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.

8. -40 °C for D version.

9. The data hold time incudes time that the power supply is off or the clock is not supplied.

Table 5.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics

Symbol Parameter Conditions

Standard

Unit

Min. Typ. Max.

−

Program/Erase Endurance

(2)

10,000

(3)

−−times

− Byte Program Time

(Program/Erase Endurance ≤ 1,000 Times)

CC = 5.0 V at Topr = 25 °C − 50 400 µs

− Byte Program Time

(Program/Erase Endurance > 1,000 Times)

CC = 5.0 V at Topr = 25 °C − 65 −µs

− Block Erase Time

(Program/Erase Endurance ≤ 1,000 Times)

CC = 5.0 V at Topr = 25 °C − 0.2 9 s

− Block Erase Time

(Program/Erase Endurance > 1,000 Times)

CC = 5.0 V at Topr = 25 °C − 0.3 − s

d(SR-ES) Time Delay from Suspend Request until

Erase Suspend

−−8ms

− Erase Suspend Request Interval 10 −−ms

− Program, Erase Voltage 2.7 − 5.5 V

− Read Voltage 2.7 − 5.5 V

− Program, Erase Temperature

-20

(8)

− 85 °C

−

Data Hold Time

(9)

Ambient temperature = 55 °C20 −−year

1 2 ... 19 20 21 22 23 24 25 26 27 28 29 ... 41 42

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