
Rev.2.10 Apr 14, 2006 page 260 of 378
REJ09B0124-0210
M16C/6N Group (M16C/6NK, M16C/6NM) 21. Flash Memory Version
21. Flash Memory Version
Aside from the on-chip flash memory, the flash memory version MCU has the same functions as the masked
ROM version.
In the flash memory version, the flash memory can perform in four rewrite mode: CPU rewrite mode, standard
serial I/O mode, parallel I/O mode, and CAN I/O mode.
Table 21.1 lists the Flash Memory Version Specifications. See Tables 1.1 and 1.2 Functions and Specifications,
for the items not listed in Table 21.1. Table 21.2 shows the Flash Memory Rewrite Modes Overview.
Table 21.1 Flash Memory Version Specifications
Item Specifications
Flash memory rewrite mode 4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)
Erase block User ROM area See Figure 21.1 Flash Memory Block Diagram
Boot ROM area 1 block (4 Kbytes)
(1)
Program method In units of word, in units of byte
(2)
Erase method Collective erase, block erase
Program and erase control method Program and erase controlled by software command
Protect method Lock bit protects each block
Number of commands 8 commands
Programming and erasure endurance
(3)
100 times
ROM code protection Parallel I/O, standard serial I/O, and CAN I/O modes are supported.
NOTES:
1. The boot ROM area contains standard serial I/O mode and CAN I/O mode rewrite control program which is stored in
it when shipped from the factory. This area can only be rewritten in parallel I/O mode.
2. Can be programmed in byte units in only parallel I/O mode.
3. Definition of programming and erasure endurance
The programming and erasure endurance is defined to be per-block erasure endurance. For example, assume a case where
a 4K-byte block A is programmed in 2,048 operations by writing one word at a time and erased thereafter.
In this case, the block is reckoned as having been programmed and erased once.
If a product is 100 times of programming and erasure endurance, each block in it can be erased up to 100 times.
Table 21.2 Flash Memory Rewrite Modes Overview
Flash Memory
CPU Rewrite Mode
(1)
Standard Serial I/O Mode
Parallel I/O Mode CAN I/O Mode
Rewrite Mode
Function
Areas which User ROM area User ROM area User ROM area User ROM area
can be rewritten
Boot ROM area
Operating Single-chip mode Boot mode Parallel I/O mode Boot mode
mode Memory expansion mode
(EW0 mode)
(4)
Boot mode (EW0 mode)
ROM programmer
None Serial programmer Parallel programmer CAN programmer
The user ROM area is
rewritten when the CPU
executes software
commands.
EW0 mode:
Rewrite in areas other
than flash memory
(2)
EW1 mode:
Can be rewritten in the
flash memory
The user ROM area is
rewritten using a
dedicated serial
programmer.
Standard serial I/O mode 1:
Clock synchronous
serial I/O
Standard serial I/O mode 2:
UART
(3)
The boot ROM and user
ROM areas are rewritten
using a dedicated parallel
programmer.
The user ROM area is
rewritten busing a dedicated
CAN programmer.
NOTES:
1. The PM13 bit remains set to 1 while the FMR01 bit in the FMR0 register = 1 (CPU rewrite mode enabled). The PM13 bit
is reverted to its original value by setting the FMR01 bit to 0 (CPU rewrite mode disabled). However, if the PM13 bit is
changed during CPU rewrite mode, its changed value is not reflected until after the FMR01 bit is set to 0.
2. When in CPU rewrite mode, bits PM10 and PM13 in the PM1 register are set to 1. The rewrite control program can only be
executed in the internal RAM or in an external area that is enabled for use when the PM13 bit = 1.
3. When using standard serial I/O mode 2, make sure a main clock input oscillation frequency is set to 5 MHz, 10 MHz, or 16
MHz.
4. Not available in T/V-ver..
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